Nanometric diamond delta doping with boron |
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| Authors: | James E Butler Anatoly Vikharev Alexei Gorbachev Mikhail Lobaev Anatoly Muchnikov Dmitry Radischev Vladimir Isaev Valerii Chernov Sergey Bogdanov Mikail Drozdov Evgeniy Demidov Ekaterina Surovegina Vladimir Shashkin Albert Davydov Haiyan Tan Louisa Meshi Alexander C Pakpour‐Tabrizi Marie‐Laure Hicks Richard B Jackman |
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| Institution: | 1. Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod, Russia;2. St. Petersburg Electrotechnical University (LETI), St. Petersburg, Russia;3. Institute for Physics of Microstructures of the Russian Academy of Sciences, Nizhny Novgorod, Russia;4. National Institute of Standards and Technology, Materials Science and Engineering Division, Gaithersburg, MD, USA;5. Ben Gurion University, Department of Materials Engineering, Beersheba, Israel;6. London Centre for Nanotechnology and the Department of Electronic and Electrical Engineering, University College London, London, UK |
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| Abstract: | Diamond is desired for active semiconducting device because of it high carrier mobility, high voltage breakdown resistance, and high thermal diffusivity. Exploiting diamond as a semiconductor is hampered by the lack of shallow dopants to create sufficient electronic carriers at room temperature. In this work, nanometer thick, heavily boron doped epitaxial diamond ‘delta doped’ layers have been grown on ultra smooth diamond surfaces which demonstrate p type conduction with enhanced Hall mobilities of up to 120 cm2/Vs and sheet carrier concentrations to 6 × 1013 cm–2, thus enabling a new class of active diamond electronic devices. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) |
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| Keywords: | diamond boron delta doping carrier mobility Hall effect growth |
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