Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method |
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Authors: | Zhang Guang-Chen Feng Shi-Wei Zhou Zhou Li Jing-Wan and Guo Chun-Sheng |
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Institution: | School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China |
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Abstract: | The evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistor (HEMT) by structure function method is proposed in this paper. The evaluation is based on the transient heating measurement of the AlGaN/GaN HEMT by pulsed electrical temperature sensitive parameter method. The extracted chip-level and package-level thermal resistances of the packaged multi-finger AlGaN/GaN HEMT with 400-μ m SiC substrate are 22.5 K/W and 7.2 K/W respectively, which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged AlGaN/GaN HEMTs. It is also experimentally proved that the extraction of the chip-level thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage. |
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Keywords: | high electron mobility transistor self-heating effect structure function reliability |
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