Effect of deposition temperature on orientation and electrical properties of (K0.5Na0.5)NbO3 thin films by pulsed laser deposition |
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| Authors: | Aifen Tian Wei Ren Lingyan WangPeng Shi Xiaofeng ChenXiaoqing Wu Xi Yao |
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| Institution: | a Electronic Material Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
b School of Material Science and Engineering, Xi’an University of Science and Technology, Xi’an 710054, China |
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| Abstract: | Lead-free ferroelectric K0.5Na0.5NbO3 (KNN) thin films have been prepared on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition process. The structures, crystal orientations and electrical properties of thin films have been investigated as a function of deposition temperature from 680 °C to 760 °C. It is found that the deposition temperature plays an important role in the structures, crystal orientations and electrical properties of thin films. The crystallization of thin films improves with increasing deposition temperature. The thin film deposited at 760 °C exhibits strong (0 0 1) preferential orientation, large dielectric constant of 930 and the remnant polarization of 8.54 μC/cm2. |
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| Keywords: | Lead-free potassium sodium niobate Thin films Pulsed laser deposition Dielectric and ferroelectric properties |
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