| Abstract: | We reported a passive Q-switched diode laser pumped Yb:YAG microchip laser with an ion-implanted semiinsulating GaAs wafer. The wafer was implanted with 400-kev As+ in the concentration of 1016 ions/cm2.To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500 ℃ for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and high reflection (HR) films,respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse. |
