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Hydrothermally grown ZnO buffer layer for the growth of highly (4 wt%) Ga-doped ZnO epitaxial thin films on MgAl2O4 (1 1 1) substrates
Authors:Seung Wook Shin   Ye Bin Kwon   A.V. Moholkar   Gi-Seok Heo   In Ok Jung   Jong-Ha Moon   Jin Hyeok Kim  Jeong Yong Lee  
Affiliation:a Department of Materials Science and Engineering, KAIST, 335 Gwahangno, Yuseong-gu, Daejeon 305-701, South Korea;b Photonics Technology Research Institute, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Gwangju 500-757, South Korea;c Department of Physics, Gopal Krishna Gokhale College, Kolhapur 416 012, Maharashtra, India;d Development of Advanced Components & Materials, Korea Institute of Industrial Technology, Gwangju 500-480, South Korea
Abstract:
Keywords:A1. X-ray diffraction   A2. Hydrothermal crystal growth   A2. Single crystal growth   B1. Oxide   B2. Semiconducting II–  V materials
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