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Realization of Toffoli gate operation using four-level atoms in cavity QED system
Authors:Tang Shi-Qing  Zhang Deng-Yu  Xie Li-Jun  Zhan Xiao-Gui and Gao Feng
Institution:Faculty of Material and Photoelectronic Physics, Xiangtan University, Xiangtan 411005, China;Department of Physics and Electronic Information Science, Hengyang Normal University, Hengyang 421008, China
Abstract:This paper proposes a scheme for realization of a three-qubit Toffoli gate operation using three four-level atoms by a selective atom--field interaction in a cavity quantum electrodynamics system. In the proposed protocol, the quantum information is encoded on the stable ground states of atoms, and atomic spontaneous emission is negligible as the large atom--cavity detuning effectively suppresses the spontaneous decay of the atoms. The influence of the dissipation on fidelity and success probability of the three-qubit Toffoli gate is also discussed. The scheme can also be applied to realize an N-qubit Toffoli gate and the interaction time required does not rise with increasing the number of qubits.
Keywords:Toffoli gate  four-level atom  cavity QED  fidelity
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