AlInGaAs/AlGaAs垂直腔面发射激光器温度特性的对比研究

通过测量、对比材料生长和器件制备条件基本相似，但是谐振腔腔模波长与增益峰值波长相对位置明显不同的两类氧化物限制型应变AlInGaAs/AlGaAs量子阱垂直腔面发射激光器(VCSEL)在261—369K温度范围内输出光功率-电流的变温曲线，同时结合测试得到的两类样品的白光反射谱、光荧光谱以及模拟计算得到的不同温度下VCSEL反射谱和增益谱，分析了输出光功率、阈值电流、斜率效率和激射波长随温度变化的关系，掌握了新材料AlInGaAs的温度特性，得到了谐振腔腔模波长和增益峰值波长的相对位置对VCSEL输出特性，尤其是对阈值的影响规律，指出获得室温工作阈值最低且稳定的VCSEL的一个方法是调整谐振腔腔模波长和增益峰值波长的相对位置，并利用这种方法获得了特征温度T₀=333K的AlInGaAs/AlGaAs量子阱VCSEL器件. 关键词： AlInGaAs 垂直腔面发射激光器 特征温度

Experimental study on comparing the temperature characteristics of AlInGaAs/AlGaAs vertical cavity surface emitting lasers

The light power-current(L-I)characteristics of vertical cavity surface emitting lasers(VCSEL),which have the same fabrication process and structure,but different detunings of Fabry-Perot(FP)resonance from the gain peaks at room temperature,were measured in the temperature range from 261K to 369K.The relationships between the output light power,threshold current,slope efficiency and lasing wavelength and the temperature were studied using the obtained characteristics in combination with the test results of their reflectivity spectra and photoluminescence signals,as well as the simulated results of their reflectivity spectra and gain spectra at different temperatures.The temperature characteristics of the new material AlInGaAs were found.The effect which the differences between the gain spectrum and the FP resonance had on the output characteristics,especially on the threshold current had been obtained.We found that VCSEL devices with minimal threshold currents and small threshold current change with temperature at room temperature could be obtained by adjusting the detuning of Fabry-Perot(FP)resonance from the gain peak.Using this method,AlInGaAs/AlGaAs strained quantum well VCSEL devices which have the characteristic temperature of 333K,and minimal threshold current and small threshold current change with temperature in the 321K to 345K range were fabricated.