The gas phase molecular structure of silyl formate,determined by electron diffraction

The structure of silyi formate, HCOOSiH₃, in the gas phase is determined by electron diffraction. The principal bond lengths and angles (r_a) are r(Si-O) = 169.5 ± 0.3 pm, r(C-O) = 135.1 ± 0.6 pm, r(C  O) = 120.9 ± 0.7 pm, ∠(C-O-Si) = 116.8 ± 0.5°, ∠(OC-O) = 123.5 ± 0.5°. The silyi group is twisted by 21° away from the planar cis conformation but there is nevertheless a very short (286.5 ±1.0 pm) non-bonded Si ·O contact.