在硅晶体中由螺位错引起的电子散射

本文讨论硅晶体中由〈110〉螺位错引起的电子散射,用紧束缚近似只考虑s电子和p电子。用长波近似只考虑Γ附近的电子散射。此散射近似地服从基尔霍夫-惠更斯形式的积分方程。用规范变换和格林函数方法解出了散射方程。确认了在硅复杂能带的情况下也同单一能带的情况一样,在位错的下游侧出现电子波播及不到的影子。关键词：

SCATTERING OF ELECTRONS BY SCREW DISLOCATIONS IN SILICON CRYSTALS

In this paper, the scattering of electrons by 〈110〉-screw dislocations insilicon crystals is discussed. We use the tight-binding approximation, only electrons in the s and p state are taken into account. With the long wave length approximation, only scattering of electrons near Г in the first BZ is considered. A scattering theoretical approach yields an integral equation of Kirchh off-Huygens type. The scatlering equation has been solved by means of gauge transformation and Green's function. It is confirmed that, as in the ease of single band in the case of many bands the shadow, which is the region that can not be affected by electron flux, appears in the down stream side of dislocations as well.