Electrical parameters retrieval of carbon nanoparticle-based metal semiconductor metal structure by standard methods and beta-ray-induced charge |
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Authors: | H. Kasani M. Taghi Ahmadi |
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Affiliation: | 1. Department of Physics, Faculty of Sciences, University of MohagheghArdabili, Ardabil, Iran;2. Department of Physics, Faculty of Sciences, Urmia University, Urmia, Iran |
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Abstract: | ![]() Semiconducting carbon nanoparticles (CNPs) represent various applications in sensing systems with exceptional electronic properties. The extraction of electronic parameters of a sensor is very important to interpret the sensing characteristics of the electronic devices. This work is concerned with the extraction of electronic parameters such as the ideality factor, the barrier height, the series resistance, and some other diode parameters of a CNP-based metal semiconductor metal structure. The parameters are determined from the experimental data and physical model using the standard current–voltage (I–V) analysis in the frame of the thermionic emission theory, impedance spectroscopy, and other methods. The mobility-lifetime products (μτ) for electrons and holes in CNP micro-wire were determined by beta-ray-induced charge with Schottky contacts. |
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Keywords: | Schottky contact metal semiconductor metal structure carbon nanotubes beta-ray-induced charge |
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