Basic ammonothermal growth of Gallium Nitride – State of the art,challenges, perspectives |
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| Authors: | M Zajac R Kucharski K Grabianska A Gwardys-Bak A Puchalski D Wasik E Litwin-Staszewska R Piotrzkowski J Z Domagala M Bockowski |
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| Institution: | 1. Ammono Lab, Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, Warsaw 01-142, Poland;2. Faculty of Physics, University of Warsaw, Pasteura 5, Warsaw 02-093, Poland;3. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, Warsaw 01-142, Poland;4. Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, Warsaw 02-668, Poland |
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| Abstract: | Recent progress in ammonothermal technology of bulk GaN growth in basic environment is presented and discussed in this paper. This method enables growth of two-inch in diameter crystals of outstanding structural properties, with radius of curvature above tens of meters and low threading dislocation density of the order of 5?×?104 cm?2. Crystals with different types of conductivity, n-type with free electron concentration up to 1019 cm?3, p-type with free hole concentration of 1016 cm?3, and semi-insulating with resistivity exceeding 1011 Ω cm, can be obtained. Ammonothermal GaN of various electrical properties is described in terms of point defects present in the material. Potential applications of high-quality GaN substrates are also briefly shown. |
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| Keywords: | Gallium Nitride (GaN) Ammonothermal growth method Semiconductor |
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