High concentration effects of ion implanted boron in silicon |
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| Authors: | H. Ryssel K. Müller K. Haberger R. Henkelmann F. Jahnel |
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| Affiliation: | 1. Fraunhofer-Institut für Festk?rpertechnologie, Paul-Gerhardt-Allee 42, D-8000, München 60, Fed. Rep. Germany
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| Abstract: | The diffusion behaviour of implanted boron in silicon was investigated using the10B(n,α)7 Li nuclear reaction. An anomalous behavior with a strong reduction of the diffusivity above an effective solubility limit at 1.5×1019, 6×1019, and 1.1×1020 cm−3 was found for annealing temperatures of 800, 900, and 1,000°C, respectively. |
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| Keywords: | 61.70 Tm 66.30 Lw |
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