Characterisation of the influence of multi-quantum barrier reflectors within GaInP/AlGaInP quantum well lasers using near-field imaging techniques |
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Authors: | MP Ackland MR Brown SPWilks |
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Institution: | a Multidisciplinary Nanotechnology Centre, Department of Physics, University of Wales Swansea, Singleton Park, Swansea SA2 8PP, UK b Multidisciplinary Nanotechnology Centre, The School of Engineering, University of Wales Swansea, Singleton Park, Swansea SA2 8PP, UK |
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Abstract: | Using a near-field scanning optical microscope, near-field photocurrent and topographic imaging has measured the effect on intrinsic electric fields and photocurrent propagation resulting from inserting multi-quantum barrier (MQB) super-lattices into quantum well lasers. Measurements on devices at two different excitation wavelengths have highlighted the sensitivity of the near-field optical technique. Strong correlations were seen in the photocurrent response of the multi-quantum barrier regions when compared with simulations made on the electric field generated within the structure. As a result, photocurrent attenuation was attributed to carrier confinement in these barrier regions when compared to a control sample. The measurements illustrate the effectiveness of the MQB, in addition to the sensitivity and power of the near-field photocurrent technique. |
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Keywords: | 72 30 +q 68 37 Uv 73 21 Fg 73 21 &minus b |
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