|
|||||
|
|
Characterization of semiconductor nanostructures formed by using ultrathin Si oxide technology |
|
| Authors: | M Ichikawa S Uchida AA Shklyaev Y Nakamura S-P Cho N Tanaka |
| Institution: | a Quantum-phase Electronic Center, Department of Applied Physics, Graduate School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan b CREST, Japan Science and Technology Agency, Japan c EcoTopia Science Institute, Nagoya University, Nagoya 464-8603, Japan |
| Abstract: | We present a method to form semiconductor nanodots on Si substrates by using ultrathin Si oxide technology and the results on their optical properties. We can form ultra-small semiconductor nanodots with the size of ∼5 nm and ultra-high density of ∼1012 cm−2 on Si surfaces covered with ultrathin SiO2 films of ∼0.3 nm thickness. We focus on photoluminescence and electroluminescence properties of Ge nanodots embedded in Si films. These structures exhibit intense luminescence in the energy region of about 0.8 eV. |
| Keywords: | 73 20Dx 71 50+t 71 10+X 71 70Ej |
| 本文献已被 ScienceDirect 等数据库收录！ | |