Effect of ytterbium concentration on cw Yb:YAG microchip laser performance at ambient temperature – Part I: Experiments |
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Authors: | Jun Dong A Shirakawa K-I Ueda AA Kaminskii |
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Institution: | (1) Institute for Laser Science, University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan;(2) Crystal Laser Physics Laboratory, Institute of Crystallography, Russian Academy of Sciences, Leninsky Pr. 59, Moscow, 119333, Russia |
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Abstract: | The microchip laser performance of Yb:YAG crystals doped with different ytterbium concentrations (CYb=10, 15, and 20 at. %) has been investigated at ambient temperature without active cooling of the gain media. Efficient laser
oscillation for a 1-mm-thick YAG doped with 10 at. % Yb3+ ions was achieved at 1030 and 1049 nm with slope efficiencies of 85% and 81%, correspondingly. The laser performance of heavy-doped
Yb:YAG crystals was limited by the thermal population at terminated lasing level and thermal lens effect at room temperature
without sufficient cooling of the samples. The laser emitting spectra of Yb:YAG microchip lasers with different Yb concentrations
and output couplings are addressed with the local temperature rise, due to the absorption of the pump power inside the gain
media under different pump levels.
PACS 42.55.Xi; 42.70.Hj; 42.55.Rz |
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Keywords: | |
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