| 非对称型IGBT的低温特性研究 |
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| 引用本文： | 张玉林[,] 胡高宏[,] 丘明[,] 杨广辉[,] 姚志豪[,].非对称型IGBT的低温特性研究[J].低温物理学报,2005,27(2):1012-1016. |
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| 作者姓名： | 张玉林[ ] 胡高宏[ ] 丘明[ ] 杨广辉[ ] 姚志豪[ ] |
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| 作者单位： | [1]中国科学院电工研究所,北京100080 [2]中国科学院研究生院,北京100039 |
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| 摘 要： | 研究表明，半导体材料在低温环境下性能可以得到很大改善．功率MOSFET低温下的优异特性已被深入揭示．本文研究了NPT型IGBT在77～300K之间的特性，实验表明，低温下NPT型IGBT的通态压降。开关损耗都有明显下降，关断拖尾现象也得到明显改善。而门槛电压略有上升．在此基础上。分析了其低温特性的物理机制以及在超导领域的潜在应用．
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| 关 键 词： | 低温 IGBT NPT |
| 收稿时间： | 04 10 2005 12:00AM |
CRYOGENIC OPERATION OF NON-PUNCH-THROUGH IGBTs |
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| ZHANG YU-LIN,HU GAO-HONG,QIU MING,YANG GUANG-HUI,YAO ZHI-HAO.CRYOGENIC OPERATION OF NON-PUNCH-THROUGH IGBTs[J].Chinese Journal of Low Temperature Physics,2005,27(2):1012-1016. |
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| Authors: | ZHANG YU-LIN HU GAO-HONG QIU MING YANG GUANG-HUI YAO ZHI-HAO |
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| Institution: | 1.Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100080;2.Graduate School of the Chinese Academy of Sciences,Beijing 100039 |
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| Abstract: | Detailed experimental data taken for non-punch-through IGBTs between 77K and 300K are presented. The forward voltage drop and the switching dissipation were found to decrease whereas the threshold voltage was found to increase slightly with a decrease in operating temperature. Physical mechanism of NPT-IGBTs operating in low temperature is analyzed. Potential applied fields also were provided. |
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| Keywords: | Cryogenic IGBT NPT |
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