Nanoindentation of vertical ZnO nanowires |
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| Authors: | S.J. Young L.W. Ji S.J. Chang T.H. Fang T.J. Hsueh |
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| Affiliation: | aInstitute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan;bInstitute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan;cInstitute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan |
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| Abstract: | ![]()
We report the experimental observations of buckling instabilities of vertical well-aligned single-crystal ZnO nanowires prepared on ZnO:Ga/glass templates. It was found that critical buckling load and buckling energy of the ZnO nanowires were 215 μN and 3.69×10−11 J, respectively. It was also found that Young's modulus of the ZnO nanowires were 232 and 454 GPa while critical buckling strains were 0.35% and 0.18% when fixed–fixed column mode and fixed–pinned column mode were used, respectively. |
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| Keywords: | Nanoindentation ZnO Nanowires Young's modulus |
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