| 砷化镓半导体材料与器件中高频场分布研究的新方法——脉冲电光检测技术 |
| |
| 引用本文： | 朱祖华.砷化镓半导体材料与器件中高频场分布研究的新方法——脉冲电光检测技术[J].光学学报,1989,9(12):1103-1108. |
| |
| 作者姓名： | 朱祖华 |
| |
| 作者单位： | 浙江大学信息与电子工程系 |
| |
| 摘 要： | 介绍了砷化镓材料和器件中高频电场的分布测量的新方法——谐波混频脉冲电光检测:它的原理、实验装置以及在砷化镓共平面波导中微波驻波场分布测量中应用的结果.在频率高达20.10GHz及开路、短路和50Ω不同的负载条件下测得的结果与理论预计值符合很好.本文最后对方法的灵敏度和空间分辨率进行讨论.
|
| 关 键 词： | 微微秒光脉冲 谐波混频电光检测 微波集成电路 |
| 收稿时间： | 1988/4/5 |
A new method——pulse electro-optic probing fo r studying the distribution of high frequency electric field in GaAs material and devices |
| |
| ZHU ZUHUA.A new method——pulse electro-optic probing fo r studying the distribution of high frequency electric field in GaAs material and devices[J].Acta Optica Sinica,1989,9(12):1103-1108. |
| |
| Authors: | ZHU ZUHUA |
| |
| Abstract: | This paper presents a new method——Harmonic-Mixing Pulse Eleotro-Optio Probing for measureing the distribution of high frequency electric field: its principle, experimental apparatus, and its application to the measurement of standing-wave in GaAs coplanar waveguide. Experimental results gotten from measurements at frequencies up to 20.10 GHz and with different terminations (short,open and 50 ohms) are in good agreement with that predicted by theory. A discussion on the sensitivity and spatial resolution of tliis measurement mfethod is given. |
| |
| Keywords: | ps optic pulse harmonic-mixing electro-optic probing microwave integrated circuit |
| 本文献已被 CNKI 等数据库收录！ |
