Analytics of CVD Processes in the Deposition of SiC by Methyltrichlorosilane |
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Authors: | Jens Heinrich Steffen Hemeltjen Günter Marx |
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Institution: | (1) TU Chemnitz, Department of Chemistry, Chair of Physical Chemistry, D 09107 Chemnitz, |
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Abstract: | Gaseous species of the thermal methyltrichlorosilane decomposition were determined qualitatively and quantitatively by in situ infrared spectroscopy and gas chromatography. Surface species like SiCl
x
were detected by reflexion in situ infrared spectroscopy. A CVD mechanism of this decomposition is introduced. The comparison between the layer composition
determined by EPMA and determined by gas phase analysis is given. |
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Keywords: | : CVD mechanism process analysis methyltrichlorosilane online gas chromatography in situ infrared spectroscopy |
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