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Analytics of CVD Processes in the Deposition of SiC by Methyltrichlorosilane
Authors:Jens Heinrich  Steffen Hemeltjen  Günter Marx
Institution:(1) TU Chemnitz, Department of Chemistry, Chair of Physical Chemistry, D 09107 Chemnitz,
Abstract: Gaseous species of the thermal methyltrichlorosilane decomposition were determined qualitatively and quantitatively by in situ infrared spectroscopy and gas chromatography. Surface species like SiCl x were detected by reflexion in situ infrared spectroscopy. A CVD mechanism of this decomposition is introduced. The comparison between the layer composition determined by EPMA and determined by gas phase analysis is given.
Keywords::   CVD mechanism  process analysis  methyltrichlorosilane  online gas chromatography  in situ infrared spectroscopy  
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