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Spin-dependent tunneling in nanostructures consisting of magnetic barriers |
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| Authors: | Maowang Lu Lide Zhang Yunxia Jin Xiaohong Yan |
| Institution: | (1) Institute of Solid State Physics, Chinese Academy of Sciences, PO Box 1129, Hefei 230031, PR China, CN;(2) Department of Physics, Xiangtan University, Xiangtan, Hunan 411105, PR China, CN |
| Abstract: | We study the spin-dependent transport properties of the nanostructures consisting of realistic magnetic barriers produced by the deposition of ferromagnetic stripes on heterostructures. It is shown that, only in the nanostructures with symmetric magnetic field with respect to the magnetic-modulation direction, electrons exhibit a considerable spin-polarization. It is also shown that the degree of the electron spin polarization is greatly dependent on the ferromagnetic stripe and its position relative to the 2DEG. A much larger electron-spin polarization can be obtained by properly fabricating the ferromagnetic stripe and by adjusting its distance above the 2DEG. Received 27 December 2001 and Received in final form 13 March 2002 Published online 25 June 2002 |
| Keywords: | PACS 73 40 Gk Tunneling – 72 10 -d Theory of electronic transport scattering mechanisms – 73 23 -b Electronic transport in mesoscopic systems – 75 70 Cn Interfacial magnetic properties (multilayers superlattices) |
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