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Diffusion and adsorption behavior of Si adatom on defect-induced H-terminated Si(0 0 1) surfaces |
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| Authors: | X.Y. Zhu X.J. Huang |
| Affiliation: | aDepartment of Physics Science and Technology, Soochow University, Suzhou 215006, China bNational Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China |
| Abstract: | |
| Keywords: | H-terminated silicon surface SDV Adsorption Diffusion Empirical tight-binding method |
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