首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Zinc(II) complexes with Schiff bases derived from ethylenediamine and salicylaldehyde: the synthesis and photoluminescent properties
Authors:O V Kotova  S V Eliseeva  A S Averjushkin  L S Lepnev  A A Vaschenko  A Yu Rogachev  A G Vitukhnovskii  N P Kuzmina
Institution:(1) Department of Chemistry, M. V. Lomonosov Moscow State University, 1 Leninskie Gory, 119991 Moscow, Russian Federation;(2) P. N. Lebedev Physical Institute, Russian Academy of Sciences, 53 Leninsky prosp., 119991 Moscow, Russian Federation;(3) Department of Chemistry, University at Albany, State University of New York, USA, New York 12222-0100 Albany, USA
Abstract:The effect of the nature of organic ligands and complex formation on the photoluminescent characteristics (relative quantum yield, excited-state lifetime) and thermal stability of tetradentate Schiff bases (H2L), derivatives of salicylaldehyde (H2(SAL)1, H2(SAL)2), o-vanillin (H2(MO)1, H2(MO)2) with ethylenediamine and o-phenylenediamine, and their zinc(II) complexes was studied. Zinc(II) complexes were synthesized by the reaction of H2L with Zn(AcO)2·2H2O in MeOH at room temperature or under reflux. In the case of H2L = H2(SAL)2, H2(MO)1, H2(MO)2, complexes of the composition ZnL·H2O were isolated irrespective of the temperature. For H2L = H2(SAL)1, the reaction results in Zn(SAL)1·H2O at room temperature and in anhydrous dimeric complex Zn(SAL)1]2 under reflux. Density functional calculations of H2L and ZnL confirmed that (1) luminescence of these compounds is due to the π-π* transition between orbitals of the organic ligand and (2) enhancement of conjugation of the chain and introduction of electron-donating substituents lead to a decrease of the energy gap and, there-fore, to a bathochromic shift of the emission maximum. Published in Russian in Izvestiya Akademii Nauk. Seriya Khimicheskaya, No. 9, pp. 1846–1855, September, 2008.
Keywords:Schiff bases  zinc(II) complexes  luminescence  organic light emitting diodes
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号