Ion implant-induced change in polyimide films monitored by variable energy positron annihilation spectroscopy

6FDA-pMDA polyimide membranes were implanted with 140 keV N⁺ ions to fluences between 2 × 10¹⁴ and 5 × 10¹⁵ cm⁻². Variable energy positron annihilation spectra were taken and spectral features compared to previously reported changes in gas permeability and permselectivity of these membranes as a function of ion fluence. Positron data corroborate the explanation of these changes in terms of molecular damage caused by the implant: for fluences up to about 1 × 10¹⁵ cm⁻², the concentration of irradiation-induced defects merely increases with implant fluence; while fluences exceeding this threshold value create a second type of positron annihilation site, thereby marking a distinct change in the structure of the polymer, which is responsible for the vast improvement of gas permselectivity data found at the same threshold fluence. PACS codes: 78.70.Bj—positron annihilation; 61.82.Pv—polymers, organic compounds; 61.72.Ww—doping and impurity implantation. © 1998 John Wiley & Sons, Inc. J. Polym. Sci. B Polym. Phys. 36: 2413–2421, 1998