| 超薄氢化非晶锗膜的结构与光电性质 |
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| 引用本文： | 李悰,徐骏,林涛,李伟,李淑鑫,陈坤基.超薄氢化非晶锗膜的结构与光电性质[J].发光学报,2011,32(11):1165-1170. |
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| 作者姓名： | 李悰 徐骏 林涛 李伟 李淑鑫 陈坤基 |
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| 作者单位： | 南京大学物理学院 固体微结构物理国家重点实验室 电子科学与工程学院, 江苏 南京 210093 |
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| 基金项目： | 江苏省自然科学基金(BK2010010); 中央高校基本科研业务费专项资金(1112021001)资助项目 |
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| 摘 要： | 通过PECVD制备出了不同厚度的a-Ge∶H膜,采用Raman光谱对样品进行了结构表征,由椭圆偏振光谱仪得到样品的厚度和光学常数,并计算了样品的光学带隙。由变温电导率分析了薄膜的电学输运性质,结果表明,载流子的传输机制为扩展态电导。进而利用变温PL谱研究了薄膜的发光性能,发现其发光峰在1.63 μm处;随着膜厚的减小,峰位和峰形都有改变,且强度明显提高。进一步分析发现,随着膜厚的减小非辐射复合跃迁的激活能增大,从而导致辐射复合过程增强。
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| 关 键 词： | 非晶锗 电导率 光学带隙 光致发光 |
| 收稿时间： | 2011-08-09 |
Structural,Eelectronic and Optical Properties of Ultra-thin Hydrogenated Amorphous Germanium Films |
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| LI Cong,XU Jun,LIN Tao,LI Wei,LI Shu-xin,CHEN Kun-ji.Structural,Eelectronic and Optical Properties of Ultra-thin Hydrogenated Amorphous Germanium Films[J].Chinese Journal of Luminescence,2011,32(11):1165-1170. |
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| Authors: | LI Cong XU Jun LIN Tao LI Wei LI Shu-xin CHEN Kun-ji |
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| Institution: | School of Physics, NationalLaboratory of Solid State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China |
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| Abstract: | Ultra-thin hydrogenated amorphous germanium films,with various thickness from 160 nm to 5 nm were grown by plasma enhanced chemical vapor deposition technique.The film structure was characterized by Raman spectroscopy,which exhibited a broad band centered around 280 cm-1 indicating their amorphous nature.The film thickness and optical properties were evaluated by ellipsometer spectroscopy.The measured thickness was well consistent with the pre-designed value and the optical band gap was about 1 eV which sli... |
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| Keywords: | amorphous germanium electric conductivity optical band gap photoluminescence |
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