| 新型光泵浦垂直外腔面发射半导体激光器 |
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| 引用本文： | 宋晏蓉,郭晓萍,王勇刚,陈檬,李港,于未茗,胡江海,张志刚,.新型光泵浦垂直外腔面发射半导体激光器[J].光子学报,2005,34(10):1448-1450. |
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| 作者姓名： | 宋晏蓉 郭晓萍 王勇刚 陈檬 李港 于未茗 胡江海 张志刚 |
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| 作者单位： | [1]北京工业大学应用数理学院光学国家重点学科,北京100022 [2]北京工业大学激光工程学院光学国家重点学科,北京100022 [3]天津大学精密仪器与光电子工程学院、教育部光电信息重点实验室,天津300072 |
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| 基金项目： | 北京市优秀人才培养专项经费和北京工业大学博士启动经费资助. |
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| 摘 要： | 用量子阱技术生长的半导体材料作激光增益介质，AlGaAs/GaAs对做布喇格反射镜，并以简单的平凹腔做谐振腔，半导体激光器作泵浦源，制作出了光泵垂直外腔面发射半导体激光器.在抽运功率1.5 W时，得到了中心波长1005 nm、最大输出功率40 mW的激光，光－光转换效率2.7%.
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| 关 键 词： | 面发射半导体激光器 光泵浦 量子阱 增益芯片 |
| 收稿时间： | 2004-07-29 |
| 修稿时间： | 2004年7月29日 |
An Novel Laser-Optically Pumped Vertical External Cavity Surface Emission Laser |
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| A novel laser-optically pumped vertical external cavity surface emitting laser was demonstrated.A diode laser was employed as a pump source.An Novel Laser-Optically Pumped Vertical External Cavity Surface Emission Laser[J].Acta Photonica Sinica,2005,34(10):1448-1450. |
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| Authors: | A novel laser-optically pumped vertical external cavity surface emitting laser was demonstratedA diode laser was employed as a pump source |
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| Institution: | 1. College of Applied Science ,Beijing University of Technology ,Beijing 100022 ;2. Laser Engineering College ,Beijing University of Technology ,Beijing 100022; 3. Ultra fast Laser Laboratory ,University of Tianiin, Tianiin 300072 |
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| Abstract: | A novel laser-optically pumped vertical external cavity surface emitting laser was demonstrated. A diode laser was employed as a pump source. The gain structure of the semiconductor was quantum wells grown by MOCVD technology. By adjusting the cavity which was typically plane-concaved structure carefully,the laser was obtained at 1005 nm centre wavelength and the output power was 40 roW. The optical-optical efficiencv was 2.7%. |
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| Keywords: | Vertical external cavity surface emitting laser Optically pumped Quantum well Gain chip |
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