前驱体法制备氮氧化硅纳米线及其光学性能研究

在Ni催化剂的存在下,通过SiCl4的水解氨解反应并在1300℃氨气气氛中进行热氮化处理制得了无定形氮氧化硅纳米线.产物经X射线衍射(XRD)、热重-差示扫描量热(TG-DSC)、扫描电镜(SEM)、透射电镜(TEM)、能量色散谱(EDS)和选区电子衍射(SAED)等表征手段进行分析,结果表明纳米线为无定形结构,直径为100～150nm.在波长为220nm的光激发下,产物的光致发光光谱(PL)在563nm和289nm处分别出现了一个强的绿光发光峰和一个弱的紫光发光峰.对纳米线的生长机理进行分析,表明纳米线的生长遵循气-液-固(VLS)机制控制模式.

Silicon Oxynitride Nanowires Derived from Polymeric Precursors and the Optical Properties

Amorphous silicon oxynitride (Si2N2O) nanowires were prepared by hydrolysis and ammonolysis of SiCl4 with the present of Ni catalyst in a stream of NH3 at the temperature up to 1300 ℃. The products were characterized by X-ray diffraction (XRD), thermogravimetry and differential scanning calorimetry (TG-DSC) analysis, scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS) and selected-area electron diffraction (SAED). The results show that the nanowires are amorphous structures with diameters in the range of 100 to 150 nm. The photoluminescence (PL) spectrum of the silicon oxynitride nanowires shows a strong green light emission peaked at 563nm and a weak ultraviolet light emission at 289 nm under 220 nm excitation wavelength. The growth mechanism of the nanowires was proposed to vapor-liquid-solid (VLS) process.