Numerical analysis of three-colour HgCdTe detectors |
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Authors: | K Jó?wikowski A Rogalski |
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Institution: | (1) Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland |
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Abstract: | The performance of three-colour HgCdTe photovoltaic heterostructure detector is examined theoretically. In comparison with
two-colour detectors with two back-to-back junctions, three-colour structure contains an absorber of intermediate wavelength
placed between two junctions and electronic barriers are used to isolate this intermediate region. This structure was first
proposed by British workers.
Three-detector structures with different localizations of separating barriers are analyzed. The calculation results are presented
in the form of spatial distributions of bandgap energy and quantum efficiency.
Enhanced original computer programs are applied to solve the system of non-linear continuity equations for carriers and Poisson
equations. In addition, the numerical analysis includes the dependence of absorption coefficient on Burstein effect as well
as interference effects in heterostructure with metallic electrical contacts.
It is shown that the performance of the detector is critically dependent on the barrier’s doping level and position in relation
to the junction. This behaviour is serious disadvantage of the considered three-colour detector. A small shift of the barrier
location and doping level causes serious changes in spectral responsivity. |
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Keywords: | three-colour HgCdTe detectors bandgap diagrams spectral responses numerical analysis |
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