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Introducing dislocation climb by bulk diffusion in discrete dislocation dynamics
Authors:Dan Mordehai  Emmanuel Clouet  Marc Fivel  Marc Verdier
Institution:1. SRMP , CEA-Saclay, 91191 Gif-sur-Yvette Cedex, France danmord@tx.technion.ac.il;3. SRMP , CEA-Saclay, 91191 Gif-sur-Yvette Cedex, France;4. LMPGM , Université Lille , 59655 Villeneuve d'Ascq Cedex, France;5. SIMaP, Grenoble INP , CNRS/UJF, BP 75, 38402 St. Martin d'Hères, France
Abstract:We report a method to incorporate dislocation climb controlled by bulk diffusion in a three-dimensional discrete dislocation dynamics (DDD) simulation for fcc metals. In this model we couple the vacancy diffusion theory to the DDD in order to obtain the climb rate of the dislocation segments. The capability of the model to reproduce the motion of climbing dislocations is examined by calculating several test-cases of pure climb-related phenomena and comparing the results with existing analytical predictions and experimental observations. As test-cases, the DDD is used to study the activation of Bardeen–Herring sources upon the application of an external stress or under vacancy supersaturation. Loop shrinkage and expansion due to vacancy emission or absorption is shown to be well described by our model. In particular, the model naturally describes the coarsening of a population of loops having different sizes.
Keywords:dislocation climb  dislocation loops  diffusion  dislocation dynamics
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