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离子注入对黑松花粉粒细胞核的损伤效应
引用本文:黄群策,梁秋霞,李国平.离子注入对黑松花粉粒细胞核的损伤效应[J].原子核物理评论,2009,26(1):76-79.
作者姓名:黄群策  梁秋霞  李国平
作者单位:1 郑州大学河南省离子束生物工程重点实验室, 河南 郑州 450052; 2 莆田学院环境与生命科学系, 福建 莆田 351100
基金项目:国家“十五”科技攻关项目(2001BA302B-03)~~
摘    要:利用激光扫描共聚焦显微技术和碱性单细胞凝胶电泳技术对经过离子注入后的黑松花粉粒内细胞核的直接损伤效应进行了观察鉴定。 研究结果表明, 离子注入后可以直接损伤细胞核结构, 导致细胞核裂解。 细胞核的损伤程度与注入离子的剂量密切相关, 即细胞核DNA分子的损伤程度随着注入离子剂量的增加而提高。 The damage of pollen nuclei of Pinus thunbergii induced directly by ion implantation were measured by the laser confocal microscopy technique and the single cell gel electrophoresis test. The results showed that ion implantation caused the nuclei structure to be damaged, leading to the nuclei degradation. The results of statistical analysis showed that the damage grade of nuclei was very correlative with the ion dosage. The damage degree of DNA in the nuclei at the level of single cells was increased with the increase of the ion implantation dose.

关 键 词:黑松    花粉粒    细胞核    离子注入    损伤效应
收稿时间:1900-01-01

Damage Effects of Pollen Nuclei of Pinus thunbergii Induced by Ion Beam Implantation
HUANG Qun-ce,LIANG Qiu-xia,LI Guo-ping.Damage Effects of Pollen Nuclei of Pinus thunbergii Induced by Ion Beam Implantation[J].Nuclear Physics Review,2009,26(1):76-79.
Authors:HUANG Qun-ce  LIANG Qiu-xia  LI Guo-ping
Institution:1 Provincial Key Laboratory of Ion Beam Bio engineering, Zhengzhou University, Zhengzhou 450052, China; 2 Department of Environment and Life Science, Putian University, Putian 351100, Fujian, China
Abstract:The damage of pollen nuclei of Pinus thunbergii induced directly by ion implantation were measured by the laser confocal microscopy technique and the single-cell gel electrophoresis test.The results showed that ion implantation caused the nuclei structure to be damaged,leading to the nuclei degradation.The results of statistical analysis showed that the damage grade of nuclei was very correlative with the ion dosage.The damage degree of DNA in the nuclei at the level of single cells was increased with the i...
Keywords:Pinus thunbergii  pollen  nuclei  ion implantation  damage effect  
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