Intramolecularly Coordinated Gallium Sulfides: Suitable Single Source Precursors for GaS Thin Films |
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| Authors: | Tomá? ?i?ica Tomá? Světlík Dr Libor Dostál Prof Ale? R??i?ka Dr Květoslav R??i?ka Dr Ludvík Bene? Prof Petr Němec Dr Marek Bou?ka Dr Roman Jambor |
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| Institution: | 1. Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Pardubice, Czech Republic;2. Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Pardubice, Czech Republic;3. Department of Physical Chemistry, Institute of Chemical Technology Prague, Prague 6, Czech Republic |
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| Abstract: | Our studies have been focused on the synthesis of N→Ga coordinated organogallium sulfides L1Ga(μ‐S)]3 ( 1 ) and L2Ga(μ‐S)]2 ( 2 ) containing either N,C,N‐ or C,N‐chelating ligands L1 or L2 (L1 is {2,6‐(Me2NCH2)2C6H3}? and L2 is {2‐(Et2NCH2)‐4,6‐tBu2‐C6H2}?). As the result of the different ligands, compounds 1 and 2 differ mutually in their structure. To change the Ga/S ratio, unusually N→Ga coordinated organogallium tetrasulfide L1Ga(κ2‐S4) ( 3 ) was prepared and the unprecedented complex {2‐CH{(CH2)3CH3}(μ‐OH)]‐6‐CH2NMe2}C6H3]GaS ( 4 ) was also isolated as the minor by‐product of the reaction. Compounds 1 – 3 were further studied as potential single‐source precursors for amorphous GaS thin film deposition by spin‐coating. |
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| Keywords: | Group 13 elements NMR spectroscopy spin coating thin-layer films |
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