Thin-film transistors based on Langmuir-Blodgett films of heteroleptic bis(phthalocyaninato) rare earth complexes

An ordered molecular assembly of heteroleptic bis(phthalocyaninato) rare earth complexes M(Pc)Pc(OC8H17)8] M = Tb, Lu; H2Pc = phthalocyanine; H2Pc(OC8H17)8 = 2,3,9,10,16,17,23,24-octakis(octyloxy)phthalocyanine] has been fabricated by the Langmuir-Blodgett (LB) technique and characterized by surface pressure-area isotherms, electronic absorption and polarized electronic absorption spectroscopy, low-angle X-ray diffraction, and atomic force microscopy. The molecular ordering in the LB multilayer film on SiO2 substrate was made into a p-channel field effect transistor (FET), which was generally operated in the enhanced mode. The energy levels of the highest occupied molecular orbital and the lowest unoccupied molecular orbital as well as the energy band diagram can be deduced from the electrochemical measurement results. The charge mobilities of Tb(Pc)Pc(OC8H17)8] and Lu(Pc)Pc(OC8H17)8] were calculated to be about 6.4 x 10(-4) and 1.7 x 10(-3) cm2 V(-1) s(-1), respectively.