New approach to the growth of SiOx nanowire bunch using Au catalyst and SiNx film on Si substrate |
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| Institution: | 1. Convergence Components & Materials Research Laboratory, Electronics and telecommunications Research Institute, Daejeon 305-700, Republic of Korea;2. School of Advanced Materials and System Engineering, Kumoh National Institute of Technology, Gumi 730-701, Republic of Korea;3. Department of Semiconductor Science & Technology, Chonbuk National University, Jeonju 561-756, Republic of Korea;4. IT Convergence Technology Research Laboratory, Woosuk University, Jeollabuk-Do 565-701, Republic of Korea;1. Department of Physics, Sri Venkateswara University, Tirupati 517 502, India;2. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, (SPRC), Chonbuk National University, Jeonju 561-756, Republic of Korea;3. Division of Material Science, Korea Basic Science Institute, Daejeon 305-806, Republic of Korea;1. Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea;2. School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, Korea;3. Department of Physics, Chonbuk National University, Jeonju 561-756, Korea;4. Division of Liberal Arts, Hanbat National University, Daejeon 305-719, Korea;1. Department of Physics, Sri Venkateswara University, Tirupati 517 502, India;2. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, (SPRC), Chonbuk National University, Jeonju 561-756, Republic of Korea;1. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Republic of Korea;2. Institute of Educational Development, Kunsan National University, Gunsan 573-701, Republic of Korea;3. Semiconductor Materials and Devices Lab., Korea Institute of Science and Technology, Republic of Korea |
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| Abstract: | SiOx nanowire bunches were fabricated on a SiNx film with Au catalytic metal in the presence of an Ar flow of 50 sccm at 1150 °C. The resulting samples were characterized by field-emission scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. A SiNx film serves as a barrier to the diffusion of Si atoms from the Si substrate to the catalytic Au metal, where a substrate is a Si source material for SiOx nanowire (NW) growth. Using this process, we could temporally control the initial growth step of SiOx NWs and easily grow the NW bunch. |
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