| 低能离子注入形成氮化硅薄膜特性的研究 |
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| 引用本文： | 陈国明,陈国樑,杨絜,邹世昌.低能离子注入形成氮化硅薄膜特性的研究[J].物理学报,1988,37(3):475-480. |
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| 作者姓名： | 陈国明 陈国樑 杨絜 邹世昌 |
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| 作者单位： | 中国科学院上海冶金研究所 |
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| 摘 要： | 低能离子束与表面相互作用主要呈现溅射、注入等现象。本文研究了在1.35keVN2+离子注入形成氮化硅的特性,并研究了注入和溅射的并存过程。在高剂量、低能(<10keV)注入的情况下,提出了有效剂量的概念,并建立了刻蚀速率、射程与有效注入剂量的关系。还用俄歇电子能谱(AES)、X射线光电子能谱(XPS)、透射电子显微镜(TEM)、背散射分析(RBS)测定了薄膜的有关特性。
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| 收稿时间： | 1987-05-18 |
INVESTIGATION OF THIN FILM Si3N4 FORMED BY LOW ENERGY ION IMPLANTATION |
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| CHEN GUO-MING,CHEN GUO-LIANG,YANG JIE and ZOU SHI-CHANG.INVESTIGATION OF THIN FILM Si3N4 FORMED BY LOW ENERGY ION IMPLANTATION[J].Acta Physica Sinica,1988,37(3):475-480. |
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| Authors: | CHEN GUO-MING CHEN GUO-LIANG YANG JIE and ZOU SHI-CHANG |
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| Abstract: | It was well known that the interaction of solid surface with low energy ion beam results in the phenomena of sputtering and implantation. The characteristics of thin film Si3N6 formed by implanting ions N2+ at energy 1350 eV into single crystal Si are studied in this paper.We consider that it is necessary to introduce the concept of effective dose for ion beam which depends on the thickness of damage layer and the etching rate of as-implanted silicon nitrides. |
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