Injection locking properties of a microchip laser |
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| Authors: | EG Lariontsev I Zolotoverkh P Besnard GM Stéphan |
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| Institution: | (1) Nuclear Physics Institute, Moscow State University, 119899 Moscow, Russia, RU;(2) Laboratoire d'Optronique associé au Centre National de la Recherche Scientifique (URA 6082), école Nationale des Sciences Appliquées et de Technologies, 6 rue de Kérampont, 22305 Lannion, France, FR |
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| Abstract: | An injected microchip laser is theoretically studied, with the use of two models: in the first model, which is traditional,
the field is represented by a single frequency component in the slowly-varying envelope approximation. In the second model,
referred to as the Fabry-Perot model, two field components are considered which are respectively centered around the frequency
of an eigenmode of the injected laser and the frequency of the injected field. Computation of locking ranges, bistability
do mains are performed and the results compared. They show not only an improved precision of the second model but also a necessity
to use it to describe some effects such as the bistable domains in the limits of the locking domains.
Received: 1st April 1998 / Accepted: 21 August 1998 |
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| Keywords: | PACS 42 55 Ah General laser theory - 42 55 Rz Doped-insulator lasers and other solid state lasers |
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