Chemically assisted ion beam etching of silicon and silicon dioxide using SF6 |
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| Authors: | S. K. Ray C. K. Maiti S. K. Lahiri |
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| Affiliation: | (1) Department of Physics and Meteorology, Indian Institute of Technology, 721302 Kharagpur, India;(2) Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, 721302 Kharagpur, India |
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| Abstract: | A chemical flux of sulfur hexafluoride (SF6) in conjunction with low-energy Ar-ion bombardment has been used for chemically assisted ion beam etching (CAIBE) of silicon and silicon dioxide. The study has shown a large degree of independent control over the selectivity and anisotropy in dry etching. The total etch rate could be controlled by varying either the Ar-ion milling parameters or the chemical flux of SF6. Etch rate enhancement of 7–8 for silicon and 3–4 for silicon dioxide have been obtained over pure physical etching. |
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| Keywords: | Etching ion beam sulfur hexafluoride silicon silicon dioxide CAIBE |
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