Elastic fields and physical properties of surface quantum dots |
| |
Authors: | Bert N A Kolesnikova A L Korolev I K Romanov A E Freidin A B Chaldyshev V V Aifantis E C |
| |
Institution: | (1) Institut für Physik Röntgenbeugung an Schichtsystemen, Humboldt-Universität zu Berlin, Newtonstr. 15, 12489, Berlin, }{Germany |
| |
Abstract: | Elastic fields in a system consisting of a surface coherent axisymmetric quantum dot-island on a massive substrate have been
theoretically studied using the finite element method. An analysis of the influence of the quantum dot shape (form factor)
and relative size (aspect ratio) δ on the accompanying elastic fields has revealed two critical quantum dot dimensions, δ
c1 and δ
c2. For δ > δ
c1, the fields are independent of the quantum dot shape and aspect ratio. At δ ≥ δ
c2, the quantum dot top remains almost undistorted. Variation of the stress tensor component σ
zz
(z is the quantum dot axis of symmetry) reveals a region of tensile stresses, which is located in the substrate under the quantum
dot at a particular distance from the interface. Using an approximate analytical formula for the radial component of displacements,
model electron microscopy images have been calculated for quantum dot islands with δ > δ
c1 in the InSb/InAs system. The possibility of stress relaxation occurring in the system via the formation of a prismatic interstitial
dislocation loop has been considered. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|