氢原子谱线测定EACVD中电子平均温度

采用蒙特卡罗方法，对以CH₄/H₂混合气体为原料气体的EACVD中氢原子的发射过程进行了模拟。在模拟中考虑了电子与H₂的弹性碰撞及振动激发、分解、电子激发、相应于H_α, H_β, H_γ谱线的激发、电离及分解电离等非弹性碰撞过程;与CH₄的碰撞考虑了弹性动量传输及振动激发、分解、电子激发、电离及分解电离等非弹性碰撞过程。研究了不同CH₄浓度下基片表面上电子平均温度与氢原子谱线相对强度的关系，给出了一种对EACVD中电子平均温度进行实时监测的方法。对于有效控制工艺条件，生长出高质量的金刚石薄膜具有重要意义。

Mean Temperature of Electron Determined by Atomic Hydrogen Emission Line in EACVD

The process of atomic hydrogen emission in CH 4/H 2 gas mixture in EACVD is simulated by Monte Carlo method. In the simulation the collision between electron and H 2 molecule has two basic types: elastic collision and inelastic collision. Four types of inelastic processes have been considered, namely vibrational excitation, dissociation, electron excitation and ionization. For e-CH 4 collision , elastic momentum transfer, vibrational excitation, dissociation, ionization and dissociation ionization are considered. The relationship between the ratio of atomic hydrogen emission line intensity and mean temperature of electron under different CH 4 concentration in the gas mixture is investigated. A method of determining the mean temperature of electron in situ in the process of diamond film deposited by EACVD is given. The result is of great importance to depositing high quality diamond films by controlling the conditions of technology efficiently.