Atmospheric Pressure Plasma Discharge for Polysiloxane Thin Films Deposition and Comparison with Low Pressure Process |
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Authors: | Riccardo?A.?Siliprandi,Stefano?Zanini,Elisa?Grimoldi,Francesco?S.?Fumagalli,Ruggero?Barni mailto:ruggero.barni@mib.infn.it" title=" ruggero.barni@mib.infn.it" itemprop=" email" data-track=" click" data-track-action=" Email author" data-track-label=" " >Email author,Claudia?Riccardi |
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Affiliation: | 1.Dipartimento di Fisica G. Occhialini,Università degli Studi di Milano-Bicocca,Milan,Italy |
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Abstract: | ![]() An atmospheric pressure dielectric barrier plasma discharge has been used to study a thin film deposition process. The DBD device is enclosed in a vacuum chamber and one of the electrodes is a rotating cylinder. Thus, this device is able to simulate continuous processing in arbitrary deposition condition of pressure and atmosphere composition. A deposition process of thin organosilicon films has been studied reproducing a nitrogen atmosphere with small admixtures of hexamethyldisiloxane (HMDSO) vapours. The plasma discharge has been characterized with optical emission spectroscopy and voltage-current measurements. Thin films chemical composition and morphology have been characterized with FTIR spectroscopy, atomic force microscopy (AFM) and contact angle measurements. A strong dependency of deposit character from the HMDSO concentration has been found and then compared with the same dependency of a typical low pressure plasma enhanced chemical vapour deposition process. |
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