The photoelectric properties of polycrystalline films of gallium arsenide |
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| Authors: | I K Kovalev L G Lavrent'eva V A Presnov |
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| Institution: | (1) Kuznetsov Siberian Physicotechnical Institute, USSR |
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| Abstract: | Certain photoelectric properties of polycrystalline films of gallium arsenide at room temperature obtained by a gas deposition method are studied. It is found that film specimens of GaAs have much greater photosensitivity than the solid material for the same current carrier density.The barrier theory of conductivity is invoked in order to explain the relationships observed. |
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