CO2-laser annealing of Al/a-Si:H contact |
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| Authors: | H. Glesková V. V. Il'chenko V. A. Skryshevsky V. I. Strikha |
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| Affiliation: | (1) Department of Solid State Physics, Comenius University, Mlynska dolina F-2, 842 15 Bratislava, Slovak Republic;(2) Radiophysics Department, Shevchenko University, Vladimirskaya 64, 252017 Kiev, Ukraine |
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| Abstract: | ![]()
The paper concerns the possibility of using CW (continuous wave) CO2-laser annealing ( =10.6  m,P 100 W/cm2) for formation of a barrier in the Al/a-Si:H/SS (SS-stainless steel) structures with good rectifyingI–V characteristics. The infrared absorption spectra, photoelectric properties, temperature effect on the conductivity and saturation current were analyzed and various contact models are discussed.We thank P.  i manec for useful and stimulating discussion, J. Stuchlík for kindly manufacturing the a-Si:H films for us and D. N. Goncharov for the aid with the measurement of the conductivity temperature dependences. |
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