Pressure effects on the semiconductor-semimetal transition in Ti2O3 |
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| Authors: | B Viswanathan S Usha Devi C N R Rao |
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| Affiliation: | (1) Department of Chemistry, Indian Institute of Technology, 208016 Kanpur;(2) Materials Science Division, National Aeronautical Laboratory, 560017 Bangalore |
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| Abstract: | ![]()
Hydrostatic pressure has negligible effect on the resistivity anomaly and thec H /a H ratio of Ti2O3. The results are consistent with the band-crossing mechanism wherein the a T and e T bands cross as thec H /a H ratio increases. |
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| Keywords: | Semiconductor-metal transition pressure effects on Ti2O3 |
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