Ho掺杂的BiFeO_3多铁陶瓷的制备及性能

用固相反应和快速退火冷却法制备了纯的BiFeO_3(BFO)陶瓷和15%Ho掺杂的Bi_(0.85)Ho_(0.15)FeO_3(BHFO)陶瓷,研究了室温下陶瓷的品格结构及其铁电、介电、漏电和磁性能.结果表明,Ho掺杂有助于减少BiFeO_3陶瓷中的杂相,改善其铁电、介电、漏电和磁性能.与BFO陶瓷相比,BHFO陶瓷具有典型的电滞回线;当电场强度为1 50 kV/cm时,其2Pr(剩余极化值)为15 μC/cm~2.同时,BHFO具有比BFO显著增大的介电常数和明显降低的介电损耗.磁性能测试表明,BHFO陶瓷表现出弱的铁磁性.

Preparation and Properties of Ho-Doped BiFeO_3 Muitiferroic Ceramics

Pure BiFeO_3(BFO) and 15% Ho-doped Bi_(0.85)Ho_(0.15)FeO_3(BHFO) ceramics were prepared by solid state reaction followed immediately by quenching process,and the structure,dielectric,ferroelectric,leakage conduction and magnetic properties were studied.The results show that Ho substitution can reduce the miscellaneous phase in the BiFeO_3 ceramics,and the ferroelectric,dielectric,leakage current and magnetic properties are improved.Compared with the BFO,BHFO ceramics exhibit a typical ferroelectric hysteresis loop with a 2P,of 15 μC/cm~2 at an applied electric field of 150 kV/cm.The dielectric measurements show that the dielectric constant and dielectric losses of BHFO ceramics are significant larger and smaller,respectively,than those of the BFO.Moreover,a weak ferromagnetism was observed in the BHFO ceramics by magnetic measurements.