Thickness dependence of kink temperature and band bending in amorphous silicon

This paper reports the thickness and temperature dependence of the conductivity for dc glow-discharge amorphous silicon (a-Si : H) films. It is found that the kink temperature, at which an abrupt change of activation energy occurs, rapidly increases for the samples thinner than 0.24 μm and that this phenomenon can be used to determine the depth of surface band bending.