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Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs-distributed Bragg mirrors on InP
Institution:1. Departamento de F?́sica, Universidade Estadual de Londrina, CP6001, CEP86051-970, Londrina, Paraná, Brazil;2. Instituto de F?́sica Gleb Wathaggin-IFGW, UNICAMP;3. France Telecom, CNET, Laboratoire de Bagneux, BP107, 92225, Bagneux Cedex, France;1. Inria, 2004 Route des Lucioles, BP 93, 06902 Sophia Antipolis Cedex, France;2. University of Nice – Sophia Antipolis, Mathematics laboratory, Parc Valrose, 06108 Nice, Cedex 02, France;3. Technische Universitaet Darmstadt, Institut fuer Theorie Elektromagnetischer Felder (TEMF), Schlossgartenstr. 8, 64289 Darmstadt, Germany;4. Institut Pascal, Université Blaise Pascal, 24, avenue des Landais, 63171 Aubière Cedex, France;1. Research Laboratory of Environmental Protection Technology, Faculty of Chemistry, Department of Applied Chemistry, University of Tabriz, Tabriz, Iran;2. Applied Chemistry Research Laboratory, Department of Chemistry, Faculty of Basic Science, Azarbaijan Shahid Madani University, P.O. box 83714-161, Tabriz, Iran;3. Engineering Faculty, Near East University, 99138, Nicosia, North Cyprus, Mersin 10, Turkey;1. Department of Physics, Faculty of Science, Istanbul University, Vezneciler, 34134, Istanbul, Turkey;2. Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 33720, Tampere, Finland;1. Institute of Laser &Micro/Nano Engineering, College of Electronics &Information Engineering, Sichuan University, No.24, South Section 1, 1st Ring Road, Chengdu, 610065, China;2. North China Research Institute of Electro-Optics, Beijing, 100015, China
Abstract:We report electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs Bragg mirror lattice matched to InP grown by molecular beam epitaxy. A 98.2% reflectivity with a 107 nm stop band width centred at 1.54 μ m is obtained. An average voltage drop of 16 mV per period at a current density of 1 KA cm ? 2is observed for a mean electron concentration of about 5.5  ×  1018cm ? 3. The influence of structural and intrinsic properties of the heterostructure on the electrical resistivity and optical reflectivity is analysed.
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