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In-situ and ex-situ characterization of GaAs/AlAs quantum well structures using spectroscopic ellipsometry |
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| Authors: | J. L. Edwards G. N. Maracas K. T. Shiralagi K. Y. Choi R. Droopad |
| Affiliation: | Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287-6206, USA |
| Abstract: | Spectroscopic ellipsometer is used to monitor the MBE growth of quantum well structures. Real time monitoring of the growth enabled the measurement of growth rate and correlation with RHEED oscillations. The growth of a single GaAs/AlAs quantum well is also monitored in real time using multiple wavelengths. Interface roughness of the interrupted “inverted” AlAs/GaAs interface was also monitored with SE. Under our growth conditions, we measure approximately a 2 ML interfacial region at the inverted interface. A correlation with photoluminescence is also discussed. |
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