Study of top and bottom contact resistance in one organic field-effect transistor

This paper reports that the organic field-effect transistors withhybrid contact geometry were fabricated, in which the top electrodesand the bottom electrodes were combined in parallel resistanceswithin one transistor. With the facility of the novel structure, thedifference of contact resistance between the top contact geometryand the bottom contact geometry was studied. The hybrid contactdevices showed similar characteristics with the top contactconfiguration devices, which provide helpful evidence on the lowercontact resistance of the top contact configuration device. Theorigin of the different contact resistance between the top contactdevice and the bottom contact device was discussed.