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| 电光腔倒空激光二极管抽运Nd∶YAG锁模激光器 | |
| 引用本文： | 张丙元,李港,陈檬,于海娟,夏军海,郭晓萍,任锋,王勇刚,马骁宇. 电光腔倒空激光二极管抽运Nd∶YAG锁模激光器[J]. 光学学报, 2005, 25(3): 356-358 |
| 作者姓名： | 张丙元 李港 陈檬 于海娟 夏军海 郭晓萍 任锋 王勇刚 马骁宇 |
| 作者单位： | 北京工业大学激光工程研究院，北京工业大学激光工程研究院，北京工业大学激光工程研究院，北京工业大学激光工程研究院，北京工业大学激光工程研究院，北京工业大学激光工程研究院，北京工业大学激光工程研究院，中国科学院半导体研究所，中国科学院半导体研究所 北京100022聊城大学物理科学与信息工程学院，聊城252059，北京100022，北京100022，北京100022，北京100022，北京100022，北京100022，北京100081，北京100081 |
| 基金项目： | 北京市自然科学基金(3021001)资助课题 |
| 摘 要： | 设计了一个简单的直腔,将电光腔倒空与激光二极管端面抽运Nd∶YAG半导体可饱和吸收镜锁模激光器结合,实现了锁模脉冲的产生、放大和输出。在连续抽运功率5 W的条件下,获得了脉冲宽度为11 ps的锁模单脉冲输出和脉冲宽度为200 ns的调Q脉冲输出,腔倒空单脉冲能量为30 nJ,重复频率为10 Hz。连续锁模运转时单个锁模脉冲的能量约为2 nJ,利用腔倒空将单脉冲的能量提高了15 倍左右。文章详细讨论了腔倒空脉冲及调Q脉冲的产生机理,并分析了加在电光晶体上的高压电脉冲以及偏振片的偏振度对腔倒空脉冲及调Q脉冲的影响。 |
| 关 键 词： | 激光器 锁模激光器 激光二极管抽运 半导体可饱和吸收镜 电光腔倒空 |
| 收稿时间： | 2004-05-18 |
Electro Optically Cavity-Dumped Laser-Diode Pumped Mode-Locked Nd∶YAG Laser with a Semiconductor Saturable Absorber Mirror |
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| Zhang Bingyuan , Li Gang Chen Meng Yu Haijuan Xia Junhai Guo Xiaoping Ren Feng Wang Yonggang Ma Xiaoyu College of Laser Engineering,Beijing University of Technology,Beijing College of Physics Science and Information Engineering,Liaocheng University,Liaocheng Institute of Semiconductors,The Chinese Academy of Sciences,Beijing. Electro Optically Cavity-Dumped Laser-Diode Pumped Mode-Locked Nd∶YAG Laser with a Semiconductor Saturable Absorber Mirror[J]. Acta Optica Sinica, 2005, 25(3): 356-358 | |
| Authors: | Zhang Bingyuan Li Gang Chen Meng Yu Haijuan Xia Junhai Guo Xiaoping Ren Feng Wang Yonggang Ma Xiaoyu College of Laser Engineering Beijing University of Technology Beijing College of Physics Science Information Engineering Liaocheng University Liaocheng Institute of Semiconductors The Chinese Academy of Sciences Beijing |
| Affiliation: | Zhang Bingyuan 1,2 Li Gang1 Chen Meng1 Yu Haijuan1 Xia Junhai1 Guo Xiaoping1 Ren Feng1 Wang Yonggang3 Ma Xiaoyu3 1 College of Laser Engineering,Beijing University of Technology,Beijing 100022 2 College of Physics Science and Information Engineering,Liaocheng University,Liaocheng 252059 3 Institute of Semiconductors,The Chinese Academy of Sciences,Beijing 100081 |
| Abstract: | An electro optically cavity-dumped laser diode-pumped mode-locked Nd∶YAG laser with a semiconductor saturable absorber mirror is reported. In the experiment tha authors employed a simple straight cavity to study the cavity dumping of the mode-locked laser. The generation, amplification and dumping of the short pulses were completed in this simple setup. With 5 W pump power the authors obtained the 11 ps single mode-locked pulse output and 200 ns Q-switched pulse output, and the single pulse energy is 30 nJ and the repetition rate is 10 Hz. The single pulse energy of cavity dumped pulse is about 15 times that of the continuous mode-locked pulse. The effect of the high voltage on the electro optical crystal and the polarization of polariser on the mode-locked pulse and the Q-switched pulse are discussed. |
| Keywords: | lasers mode-locked laser laser diode pumped semiconductor saturable absorber mirror electro-optical cavity dumping |
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