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Simulating a low-temperature Maxwellian plasma using SH-HtscEBIT
Authors:B.S. Tu  M.C. Li  Q.F. Lu  Y. Yang  K. Yao  D. Lu  Y. Shen  C.Y. Chen  R. Hutton  Y.M. Zou  J. Xiao
Affiliation:Shanghai EBIT Laboratory, Institute of Modern Physics, Fudan University, and the Key Laboratory of Nuclear Physics and Ion-Beam Application (MOE), Shanghai 200433, China
Abstract:This paper reports an experimental realization of a low-temperature quasi-Maxwell–Boltzmann plasma in an electron beam ion trap (EBIT) by employing a special energy sweep technique. A Maxwellian C IV plasma with electron temperatures in the range 10–40?eV is simulated in the Shanghai high-temperature superconducting EBIT (SH-HtscEBIT), which requires stable performance of the EBIT under the extreme condition of ultralow electron beam energy. The C IV spectra are obtained by an extreme ultraviolet spectrometer in the wavelength region 290–400?Å. The measured spectral line intensity ratios are compared with the results of calculations using a collisional-radiative model. The mean difference between the experimental and theoretical results in the simulated temperature region is about 14%.
Keywords:EUV spectra  EBIT  Plasma simulation
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