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Multiferroic tunnel junctions |
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| Authors: | Yue-Wei Yin Muralikrishna Raju Wei-Jin Hu Xiao-Jun Weng Ke Zou Jun Zhu Xiao-Guang Li Zhi-Dong Zhang Qi Li |
| Institution: | 1. Department of Physics, Pennsylvania State University, University Park, PA, 16802, USA 2. Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei, 230026, China 3. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China 4. Department of Materials Science and Engineering, Materials Research Institute, Pennsylvania State University, University Park, PA, 16802, USA |
| Abstract: | Magnetic tunnel junctions with ferroelectric barriers, often referred to as multiferroic tunnel junctions, have been proposed recently to display new functionalities and new device concepts. One of the notable predictions is that the combination of two charge polarizing states and the parallel and antiparallel magnetic states could make it a four resistance state device. We have recently studied the ferroelectric tunneling using a scanning probe technique and multiferroic tunnel junctions using ferromagnetic La0.7Ca0.3MnO3 and La0.7Sr0.3MnO3 as the electrodes and ferroelectric (Ba, Sr)TiO3 as the barrier in trilayer planner junctions. We show that very thin (Ba, Sr)TiO3 films can sustain ferroelectricity up till room temperature. The multiferroic tunnel junctions show four resistance states as predicted and can operate at room temperatures. |
| Keywords: | multiferroic tunnel junction ferroelectric film tunneling magnetoresistance effect tunneling electroresisitance effect magnetoelectric coupling |
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