Effect of native defects and Co doping on ferromagnetism in HfO2: first-principles calculations |
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Authors: | Han Chong Yan Shi-Shen Lin Xue-Ling Hu Shu-Jun Zhao Ming-Wen Yao Xin-Xin Chen Yan-Xue Liu Guo-Lei Mei Liang-Mo |
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Affiliation: | School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong, People's Republic of China. |
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Abstract: | First-principles calculations of undoped HfO(2) and cobalt-doped HfO(2) have been carried out to study the magnetic properties of the dielectric material. In contrast to previous reports, it was found that the native defects in HfO(2) could not induce strong ferromagnetism. However, the cobalt substituting hafnium is the most stable defect under oxidation condition, and the ferromagnetic (FM) coupling between the cobalt substitutions is favorable in various configurations. We found that the FM coupling is mediated by the threefold-coordinated oxygen atoms in monoclinic HfO(2) and could be further enhanced in electron-rich condition. |
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Keywords: | magnetic semiconductor hafnium oxide ferromagnetism electronic structure first‐principles calculations |
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